Electronic Circuits- I Syllabus for B.Tech 3rd sem is covered here. This gives the details about credits, number of hours and other details along with reference books for the course.
The detailed syllabus for Electronic Circuits- I B.Tech (R13) thirdsem is as follows
OBJECTIVES: The student should be made to
- Learn about biasing of BJTs and MOSFETs
- Design and construct amplifiers
- Construct amplifiers with active loads
- Study high frequency response of all amplifiers
UNIT I : BIASING OF DISCRETE BJT AND MOSFET [9 hours]
DC Load line, operating point, Various biasing methods for BJT-Design-Stability-Bias compensation, Thermal stability, Design of biasing for JFET, Design of biasing for MOSFET
UNIT II : BJT AMPLIFIERS [9 hours]
Small signal Analysis of Common Emitter-AC Loadline, Voltage swing limitations, Common collector and common base amplifiers – Differential amplifiers- CMRR- Darlington Amplifier- Bootstrap technique – Cascaded stages – Cascode Amplifier,
UNIT III : JFET AND MOSFET AMPLIFIERS [9 hours]
Small signal analysis of JFT amplifiers- Small signal Analysis of MOSFET and JFET, Common source amplifier, Voltage swing limitations, Small signal analysis of MOSFET and JFET Source follower and Common Gate amplifiers, – BiMOS Cascode amplifier
[TOTAL (L:45+T:15): 60 PERIODS]
OUTCOMES: Upon Completion of the course, the students will be able to:
- Design circuits with transistor biasing.
- Design simple amplifier circuits.
- Analyze the small signal equivalent circuits of transistors.
- Design and analyze large signal amplifiers.
TEXT BOOK:
- Donald .A. Neamen, Electronic Circuit Analysis and Design –2nd Edition,Tata Mc Graw Hill, 2009.
REFERENCES:
- Adel .S. Sedra, Kenneth C. Smith, “Micro Electronic Circuits”, 6th Edition, Oxford University Press, 2010.
For all other B.Tech ECE 3rd sem syllabus go to Anna University B.Tech Electronics and Communication Engineering (ECE) 3rd Sem Course Structure for (R13) Batch.All details and yearly new syllabus will be updated here time to time.
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