Electronic Devices and Circuits detail TNDTE Diploma syllabus for Instrumentation And Control Engineering (IN), M scheme is extracted from TNDTE official website and presented for diploma students. The course code (34031), and for exam duration, Teaching Hr/week, Practical Hr/week, Total Marks, internal marks, theory marks, duration and credits do visit complete sem subjects post given below. The syllabus PDFs can be downloaded from official website.
For all other instrumentation 3rd sem syllabus for diploma m scheme tndte you can visit Instrumentation 3rd Sem Syllabus for Diploma M Scheme TNDTE Subjects. The detail syllabus for electronic devices and circuits is as follows.
Rationale:
Basic electronic components checking characteristics must be studied by the budding Instrumentation Engineers before they go for further applications. Board level servicing of equipments may cause heavy budgets to the users of the electronic equipment. So chip level/component level servicing is motivated / encouraged for the diploma students. For this basic subject must be taught in full understanding of the principles
Objectives:
On completion of the following units of syllabus contents, the students must be able to:
- Understand the working principle of PN junction diode zener diode and application
- Understand the working principle of different types of rectifiers
- Understand the different transistor configurations
- Differentiate various types of amplifiers
- Study the performance of special devices like UJT,FET
- Study the performance of different transistor oscillators
- Study the working of SCR, DIAC, and TRIAC
- Study the working and types of MOSFET
- Study the different modes of operations of MOSFET
- Know the working principle of optoelectronic devices
- Study the performance of solar cell with principle and applications
- Explain the concept of mV using IC555
- Study the working principle of clippers, clampers and Schmitt triggers
Unit 1
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Unit 2
Bipolar junction Transistor:
Transistor
NPN and PNP transistor – operation-transistor as an amplifiertransistor as a switch – transistor biasing – fixed bias, collector base bias, self bias – CB,CE,CC configurations – characteristics -comparison between three configurations in terms of input impedance, output impedance, current gain, voltage gain – classification of amplifiers- 10
RC coupled amplifier – emitter follower and its application – negative feedback Concept, effect of negative feedback – types of negative feedback connections 5
Unit 3
Transistor Oscillators and FET and UJT:
Transistor oscillator
Classifications – Condition for oscillations (Barkhausen criterion) – General form of LC oscillator – Hartley Oscillator – Colpitts Oscillator -RC Phase shift oscillator- Crystal oscillator.
Field Effect Transistor
construction – working principle of FET – difference Between FET and BJT – classification of FET – characteristics of FET -Applications – FET amplifier (common source amplifier)
Uni Junction Transistor
construction – equivalent circuit – operation -Characteristics – UJT as a relaxation oscillator
Unit 4
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Unit 5
Opto Electronics Devices and wave shaping circuits:
Classification of opto electronic devices – symbols, Characteristics, working of LDR, LED, 7 segment LED and LCD- opto coupler – Photo transistor. Clipper, Clamper Circuits and waveforms only – Solar Cell – Principles -Applications. Astable, Monostable and Bi-stable Multivibrators using Transistors -Schmitt Trigger using Transistors.
Text Books:
- Electronics Devices & Circuits by Salivahanan S, N.Suresh Kumar, A.Vallavaraj Tata McGraw Publication 3rd Edition 2016
- Electronics Devices and circuit theory by Boyestad & Nashelsky, PHI , New Delhi 2009
Reference Books:
For complete syllabus and results, class timetable and more pls download iStudy Syllabus App. It’s a lightweight, easy to use, no images, no pdfs platform to make students life easier.
For detail syllabus of all other subjects of BE Instrumentation, M scheme do visit Instrumentation 3rd Sem syllabus for M scheme.
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