3rd Sem, B.E/B.Tech, Syllabus

MOSFETs and Digital Circuits Syllabus for VTU BE/B.Tech CBCS 2015-16

MOSFETs and Digital Circuits Syllabus for VTU BE/B.Tech Nano Technology third sem complete syllabus covered here. This will help you understand complete curriculum along with details such as exam marks and duration. The details are as follows.

Subject Code 15NT34 IA Marks 20
Number of Lecture Hours/Week 04 Exam Marks 80
Total Number of Lecture Hours 50 Exam Hours 3

CREDITS – 04

Course objectives:This course will enable students to:

  • Describe, Illustrate and Analyze MOS transistor theory, MOS VI characteristics, NMOS and PMOS transistor and CMOS technology
  • Define and describe realization of digital circuits using CMOS technology
  • Describe, Demonstrate, Analyze and Design of Mealy and Moore Models, Synchronous Sequential Circuits, State diagrams and Registers and Counters.
MODULES TEACHING HOURS REVISED BLOOM’S TAXONOMY (RBT) LEVEL
Module -1                                                                                                                                                      _
MOSFETs Field – Effect Transistors: Introduction, Construction and Characteristics of JFETs, Transfer Characteristics- Derivation, Applying Schokley’s Equation, Depletion Type MOSFET: Basic Construction, Types of MOS, NMOS, PMOS, Basic Operation and Characteristics, VI Characteristics, Fabrication process of MOS transistors, N-well process, twin well process, SOI process MOSFET models: Small signal model, introduction to second order effects: body effect, channel length modulation, sub threshold conduction 10 Hours L1,L2
Module -2 _

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10 Hours L1, L2
Module -3 _  
CMOS sequential circuits 1-bit Latch, SR latch, gated SR latch, D-latch, positive triggered latch, negative triggered latch, master-slave register, flip flop, edge triggered register, JK flip flop, Latch vs Registers Timing Diagram: Timing definitions, setup time, hold time, clock to q delay, maximum clock frequency, mux based latch, CMOS Schmitt trigger, ring oscillator 10 Hours L1, L2, L3
Module -4 _
Registers and Counters Registers: Introduction, Registers: Four Bit Latch, Shift Register, Serial In Serial Out Shift Register: Left-Shift Serial-In Serial-Out Register with D Flip-Flop, Serial-In Parallel-Out Shift Register, Parallel-In Serial-Out Shift Register: PISO Left-Shift Register, Ring Counter, Johnson Counter. Counters: Introduction, Synchronous Counter, Modulus-4 Synchronus Up Counter, Modulus-4 Synchronus Down Counter, Modulus-4 Synchronus Up/Down Counter, Modulus-8 Synchronus Up Counter, Modulus-8 Synchronus Down Counter, Modulus-8 Synchronus Up/ Down Counter. 10 Hours L1, L2, L3, L4
Module -5 _
Finite State Machines: Introduction, mealy machine, Moore machines, sequence detector, examples of sequence detector of 4 bit sequence, representing counters using FSM diagrams 10 Hours L1, L2, L3, L4

Course outcome: After studying this course, students will be able to:

  • Discuss MOSFETs and its properties, CMOS technology and importance of MOS models
  • Use CMOS technology and realize combinational and sequential digital circuits
  • Design complex digital circuits and state machines

Graduate Attributes (as per NBA):

  • Engineering Knowledge.
  • Problem Analysis.
  • Design / development of solutions (partly).
  • Interpretation of data.

Question paper pattern:

  • The question paper will have ten questions.
  • Each full Question consisting of 16 marks
  • There will be 2 full questions (with a maximum of four sub questions) from each module.
  • Each full question will have sub questions covering all the topics under a module.
  • The students will have to answer 5 full questions, selecting one full question from each module.

Text Books:

  • Neil H.E. Weste, Kamran Eshraghian, Principle of CMOS and VLSI Design A Systems Perspective 2nd Edition, Addison Wesley(Module 1 to Module 3)
  • D. P. Kothari and J. S Dhillon, “Digital Circuits and Design”, Pearson, 2016, ISBN:9789332543539 (Module 4 and Module 5)

Reference Books:

  • Donald D. Givone, “Digital Principles and Design”, McGraw Hill.
  • Sung-Mo (Steve) Kang, Yusuf Leblebici, CMOS DIGITAL INTEGRATED CIRCUITS ANALYSIS & DESIGN3rd Edi=on, Mc Graw-Hill
  • David A. Bell, “Electronic Devices and Circuits”, Oxford University Press.

For all other BE/B.Tech 3rd Sem Subject syllabus do follow VTU 3rd Sem BE / B.Tech Syllabus CBCS (2015-16) Scheme for Nano Technology Group.

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