3rd Sem, B.E/B.Tech, Syllabus

Analog Electronics Laboratory Syllabus for VTU BE/B.Tech CBCS 2015-16

Analog Electronics Laboratory Syllabus for VTU BE/B.Tech Electronics and Communication /Telecommunication Engineering third sem complete syllabus covered here. This will help you understand complete curriculum along with details such as exam marks and duration. The details are as follows.

Laboratory Code 15ECL37 IA Marks 20
Number of Lecture Hours/Week 01Hr Tutorial (Instructions) + 02 Hours Laboratory Exam Marks 80
Exam Hours 3

CREDITS – 02

Course Objectives:
This laboratory course enables students to get practical experience in design, assembly, testing and evaluation of

  • Rectifiers and Voltage Regulators.
  • BJT characteristics and Amplifiers.
  • JFET Characteristics and Amplifiers.
  • MOSFET Characteristics and Amplifiers
  • Power Amplifiers.
  • RC-Phase shift, Hartley, Colpitts and Crystal Oscillators.
Laboratory Experiments:

NOTE: The experiments are to be carried using discrete components only.

Revised Bloom’s Taxonomy (RBT) Level
1. Design and set up the following rectifiers with and without filters and to determine ripple factor and rectifier efficiency: (a) Full Wave Rectifier (b) Bridge Rectifier L1, L2, L3, L4
Download iStudy App (No Ads, No PDFs) for complete VTU syllabus, results, timetables and all other updates. L1, L2, L3, L4
3. Conduct an experiment on Series Voltage Regulator using Zener diode and power transistor to determine line and load regulation characteristics. L2, L3, L4
4. Realize BJT Darlington Emitter follower with and without bootstrapping and determine the gain, input and output impedances L2, L3, L4
5. Design and set up the BJT common emitter amplifier using voltage divider bias with and without feedback and determine the gainbandwidth product from its frequency response. L2, L3, L4, L5
6. Plot the transfer and drain characteristics of a JFET and calculate its drain resistance, mutual conductance and amplification factor. L1, L2, L3, L4
7. Design, setup and plot the frequency response of Common Source JFET/MOSFET amplifier and obtain the bandwidth. L2, L3, L4, L5
8. Plot the transfer and drain characteristics of n-channel MOSFET and calculate its parameters, namely; drain resistance, mutual conductance and amplification factor. L1, L2, L3, L4
9. Set-up and study the working of complementary symmetry class B push pull power amplifier and calculate the efficiency. L2, L3, L4, L5
10. Design and set-up the RC-Phase shift Oscillator using FET, and calculate the frequency of output waveform. L2, L3, L4, L5
11. Design and set-up the following tuned oscillator circuits using BJT, and determine the frequency of oscillation. (a) Hartley Oscillator (b) Colpitts Oscillator L2, L3, L4, L5
12. Design and set-up the crystal oscillator and determine the frequency of oscillation. L2, L3, L4, L5

Course outcomes: On the completion of this laboratory course, the students will be able to:

  • Design and Test rectifiers, clipping circuits, clamping circuits and voltage regulators.
  • Compute the parameters from the characteristics of JFET and MOSFET devices.
  • Design, test and evaluate BJT amplifiers in CE configuration.
  • Design and Test JFET/MOSFET amplifiers.
  • Design and Test a power amplifier.
  • Design and Test various types of oscillators.

Graduate Attributes (as per NBA)

  • Engineering Knowledge.
  • Problem Analysis.
  • Design/Development of solutions.

Conduct of Practical Examination:

  • All laboratory experiments are to be included for practical examination.
  • Students are allowed to pick one experiment from the lot.
  • Strictly follow the instructions as printed on the cover page of answer script for breakup of marks.
  • Change of experiment is allowed only once and 15% Marks allotted to the procedure part to be made zero.

For all other BE/B.Tech 3rd Sem Subject syllabus do follow VTU 3rd Sem BE / B.Tech Syllabus CBCS (2015-16) Scheme for Electronics & Communication and Telecommunication Engineering Group.

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