Analog Electronics Laboratory Syllabus for VTU BE/B.Tech Electronics and Communication /Telecommunication Engineering third sem complete syllabus covered here. This will help you understand complete curriculum along with details such as exam marks and duration. The details are as follows.
| Laboratory Code | 15ECL37 | IA Marks | 20 |
|---|---|---|---|
| Number of Lecture Hours/Week | 01Hr Tutorial (Instructions) + 02 Hours Laboratory | Exam Marks | 80 |
| Exam Hours | 3 |
CREDITS – 02
Course Objectives:
This laboratory course enables students to get practical experience in design, assembly, testing and evaluation of
- Rectifiers and Voltage Regulators.
- BJT characteristics and Amplifiers.
- JFET Characteristics and Amplifiers.
- MOSFET Characteristics and Amplifiers
- Power Amplifiers.
- RC-Phase shift, Hartley, Colpitts and Crystal Oscillators.
| Laboratory Experiments:
NOTE: The experiments are to be carried using discrete components only. |
Revised Bloom’s Taxonomy (RBT) Level |
|---|---|
| 1. Design and set up the following rectifiers with and without filters and to determine ripple factor and rectifier efficiency: (a) Full Wave Rectifier (b) Bridge Rectifier | L1, L2, L3, L4 |
| Download iStudy App (No Ads, No PDFs) for complete VTU syllabus, results, timetables and all other updates. | L1, L2, L3, L4 |
| 3. Conduct an experiment on Series Voltage Regulator using Zener diode and power transistor to determine line and load regulation characteristics. | L2, L3, L4 |
| 4. Realize BJT Darlington Emitter follower with and without bootstrapping and determine the gain, input and output impedances | L2, L3, L4 |
| 5. Design and set up the BJT common emitter amplifier using voltage divider bias with and without feedback and determine the gainbandwidth product from its frequency response. | L2, L3, L4, L5 |
| 6. Plot the transfer and drain characteristics of a JFET and calculate its drain resistance, mutual conductance and amplification factor. | L1, L2, L3, L4 |
| 7. Design, setup and plot the frequency response of Common Source JFET/MOSFET amplifier and obtain the bandwidth. | L2, L3, L4, L5 |
| 8. Plot the transfer and drain characteristics of n-channel MOSFET and calculate its parameters, namely; drain resistance, mutual conductance and amplification factor. | L1, L2, L3, L4 |
| 9. Set-up and study the working of complementary symmetry class B push pull power amplifier and calculate the efficiency. | L2, L3, L4, L5 |
| 10. Design and set-up the RC-Phase shift Oscillator using FET, and calculate the frequency of output waveform. | L2, L3, L4, L5 |
| 11. Design and set-up the following tuned oscillator circuits using BJT, and determine the frequency of oscillation. (a) Hartley Oscillator (b) Colpitts Oscillator | L2, L3, L4, L5 |
| 12. Design and set-up the crystal oscillator and determine the frequency of oscillation. | L2, L3, L4, L5 |
Course outcomes: On the completion of this laboratory course, the students will be able to:
- Design and Test rectifiers, clipping circuits, clamping circuits and voltage regulators.
- Compute the parameters from the characteristics of JFET and MOSFET devices.
- Design, test and evaluate BJT amplifiers in CE configuration.
- Design and Test JFET/MOSFET amplifiers.
- Design and Test a power amplifier.
- Design and Test various types of oscillators.
Graduate Attributes (as per NBA)
- Engineering Knowledge.
- Problem Analysis.
- Design/Development of solutions.
Conduct of Practical Examination:
- All laboratory experiments are to be included for practical examination.
- Students are allowed to pick one experiment from the lot.
- Strictly follow the instructions as printed on the cover page of answer script for breakup of marks.
- Change of experiment is allowed only once and 15% Marks allotted to the procedure part to be made zero.
For all other BE/B.Tech 3rd Sem Subject syllabus do follow VTU 3rd Sem BE / B.Tech Syllabus CBCS (2015-16) Scheme for Electronics & Communication and Telecommunication Engineering Group.
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