Lithographic Techniques Detailed Syllabus for Nano Technology M.Tech first year second sem is covered here. This gives the details about credits, number of hours and other details along with reference books for the course.
The detailed syllabus for Lithographic Techniques M.Tech 2017-2018 (R17) first year second sem is as follows.
M.Tech. I Year II Sem.
Course Objectives:
- Able to define the concepts involved in physics and chemistry of surfaces along with the fundamental interactions amongst them.
- Understand the key concepts of lithographic and microscopic resolution and apply this knowledge to estimate the intrinsic resolution limits for manipulation and imaging/inspection tools; Redefining the concepts of contrast and a transfer function for all systems and explain their role in both microscopy and lithography;
- Evolve how processing tools are applied to transfer nanostructured patterns into useful materials based on device architectures; analyze and evaluate proposed approaches to material processing to device designs in advance
Course Outcomes: The ultimate aim is to study about nanostructures fabrication and processing in detail and to exercise
the learners’ knowledge and imagination of nanoscience and nanotechnology toward engineering applications coupled with detailed justifications
Prerequisite: Clean room technology, thin films coating techniques
UNIT–I: Introduction to lithography and Optical lithography: Introduction to lithography- Contact, proximity printing and Projection Printing, Resolution Enhancement techniques, overlay-accuracies, Mask-Error enhancement factor (MEEF), Positive and negative photoresists.
UNIT–II: Electron Lithography: Electron optics, Raster scan and Vector scan, Electron proximity / Projection Printing, Direct writing, Electron resists, Electron Beam Applications.
UNIT–III: X-ray Lithography: X-ray Proximity and projection printing X-ray masks, X-ray sources, X-ray resists.
UNIT–IV: Ion Lithography: Focussed ion beam – Point sources of Ion, Ion Column, Beam writing, Focused Ion Beam Lithography, Masked Ion Beam Lithography, Ion Projection Lithography.
UNIT–V: Lithography based on Surface Instabilities: Wetting, De-wetting, Adhesion, Limitations, Resolution and Achievable / line widths of each of the above techniques
REFERENCE BOOKS:
- K. L. Chopra, “Thin Film Phenomenon”, McGraw-Hill, 1968
- John N. Helbert, “Handbook of VLSI Microlithography”, Noyes Publication, USA, 2001.
- James R Sheats and Bruce w. Smith, “Microlithography Science and Technology”, Marcel Dekker Inc., New York, 1998.
- S. Wolf “Silicon processing for the VLSI era”, Vol-1 to 4, Lattice Press.
- J.P. Hirth and G.M. Pound “Evaporation: Nucleation and Growth Kinetics” (Pergamon Press, Oxford, 1963R. F. Bunshah and C. V. Deshpandey “Evaporation Processes” MRS Bulletin p. 33, Dec. 1988.
- W. D. Westwood “Sputter Deposition Processes” MRS Bulletin p. 46, Dec. 1988.
- P. Harris “Taking the Lead in Electron-beam Deposition” Vacuum & Thin Film, Feb. 1999, p. 26.
- B. Heinz Sputter Target and Thin Film Defects” Vacuum & Thin Film, October 1999, p. 22.
- G. S. Bales et al., “Growth and Erosion of Thin Splid Films”, Science, 249, 264 (1990).
- C. R. M. Grovenor, H. T. G. Hentzell and D.A. Smith, “The Development of Grain Structure during Growth of Metallic Films” Acta Metallurgica 32, 773 (1984).
- L. A. Stelmack, C. T. Thurman and G. R. Thompson “Review of Ion-assisted Deposition:
- Research to Production”, Nuclear Instruments and Methods in Physics Research B, 37/38,787 (1989).
For all other M.Tech 1st Year 2nd Sem syllabus go to JNTUH M.Tech Nano Technology 1st Year 2nd Sem Course Structure for (R17) Batch.
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