Electronic Devices and Circuits detailed syllabus for Electronics & Instrumentation Engineering (EIE), 2nd Year 1st Sem R18 regulation has been taken from the JNTUH official website and presented for the B.Tech students affiliated to JNTUH course structure. For Course Code, Subject Names, Theory Lectures, Tutorial, Practical/Drawing, Credits, and other information do visit full semester subjects post given below. We make sure the result links and syllabus uploaded here is latest and up to date, also the syllabus PDF files can also be downloaded from the universities official website.
For Electronics & Instrumentation Engineering (EIE) 2nd Year 1st Sem R18 Regulation Scheme, do visit EIE 2nd Year 1st Sem R18 Scheme. The detailed syllabus for electronic devices and circuits is as follows.
Electronic Devices and Circuits Subject Syllabus for EIE 2nd Year 1st Sem R18 Regulation
Course Objectives:
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Course Outcomes:
Upon completion of the Course, the students will be able to
- Know the characteristics of various components.
- Understand the utilization of components.
- Understand the biasing techniques
- Design and analyze small signal amplifier circuits.
UNIT – I
Diode and Applications: Diode – Static and Dynamic resistances, Equivalent circuit, Load line analysis, Diffusion and Transition Capacitances, Diode Applications: Switch-Switching times.
Rectifier – Half Wave Rectifier, Full Wave Rectifier, Bridge Rectifier, Rectifiers with Capacitive and Inductive Filters, Clippers-Clipping at two independent levels, Clamper-Clamping Circuit Theorem, Clamping Operation, Types of Clampers.
UNIT – II
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UNIT – III
Junction Field Effect Transistor (FET): Construction, Principle of Operation, Pinch-Off Voltage, VoltAmpere Characteristic, Comparison of BJT and FET, Biasing of FET, FET as Voltage Variable Resistor. Special Purpose Devices: Zener Diode – Characteristics, Voltage Regulator. Principle of Operation -SCR, Tunnel diode, UJT, Varactor Diode.
UNIT – IV
Analysis and Design of Small Signal Low Frequency BJT Amplifiers: Transistor Hybrid model, Determination of h-parameters from transistor characteristics, Typical values of h- parameters in CE, CB and CC configurations, Transistor amplifying action, Analysis of CE, CC, CB Amplifiers and CE Amplifier with emitter resistance, low frequency response of BJT Amplifiers, effect of coupling and bypass capacitors on CE Amplifier.
UNIT – V
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TEXT BOOKS:
- Electronic Devices and Circuits- Jacob Millman McGraw Hill Education
- Electronic Devices and Circuits theory- Robert L. Boylestead, Louis Nashelsky, 11th Edition, 2009, Pearson.
REFERENCE BOOKS:
- The Art of Electronics, Horowitz, 3rd Edition Cambridge University Press
- Electronic Devices and Circuits, David A. Bell – 5th Edition, Oxford.
- Pulse, Digital and Switching Waveforms -J. Millman, H. Taub and Mothiki S. Prakash Rao, 2Ed., 2008, Mc Graw Hill.
For detailed syllabus of all the other subjects of B.Tech 2nd Year Electronics & Instrumentation Engineering (EIE), visit Electronics & Instrumentation Engineering (EIE) 2nd Year Syllabus Subjects.
For results of Electronics & Instrumentation Engineering (EIE) 2nd Year 1st Sem R18 Regulation, visit EIE 2nd Year 1st Sem R18 Regulation results direct link.