{"id":22253,"date":"2020-07-12T02:49:18","date_gmt":"2020-07-12T02:49:18","guid":{"rendered":"https:\/\/www.inspirenignite.com\/vtu\/18ec33-electronic-devices-ete-syllabus-for-be-3rd-sem-2018-scheme-vtu\/"},"modified":"2020-07-12T02:49:18","modified_gmt":"2020-07-12T02:49:18","slug":"18ec33-electronic-devices-ete-syllabus-for-be-3rd-sem-2018-scheme-vtu","status":"publish","type":"post","link":"https:\/\/www.inspirenignite.com\/vtu\/18ec33-electronic-devices-ete-syllabus-for-be-3rd-sem-2018-scheme-vtu\/","title":{"rendered":"18EC33: Electronic Devices ETE Syllabus for BE 3rd Sem 2018 Scheme VTU"},"content":{"rendered":"

Electronic Devices detailed Syllabus for Electronics & Telecommunication Engineering (ETE), 2018 scheme has been taken from the VTUs<\/a> official website and presented for the VTU students. For Course Code, Subject Names, Teaching Department, Paper Setting Board, Theory Lectures, Tutorial, Practical\/Drawing, Duration in Hours, CIE Marks, Total Marks, Credits and other information do visit full semester subjects post given below. The Syllabus PDF files can also be downloaded from the official website of the university.<\/p>\n

For all other VTU ETE 3rd Sem Syllabus for BE 2018 Scheme, do visit VTU ETE 3rd Sem Syllabus for BE 2018 Scheme <\/a>Subjects. The detailed Syllabus for electronic devices is as follows. <\/p>\n

Course Learning Objectives:<\/h4>\n

For the complete Syllabus, results, class timetable, and many other features kindly download the iStudy App<\/a>
It is a lightweight, easy to use, no images, and no pdfs platform to make students’s lives easier.<\/b>
\"Get<\/a>. <\/p>\n

Module-1<\/h4>\n

\nSemiconductors Bonding forces in solids, Energy bands, Metals, Semiconductors and Insulators, Direct and Indirect semiconductors, Electrons and Holes, Intrinsic and Extrinsic materials, Conductivity and Mobility, Drift and Resistance, Effects of temperature and doping on mobility, Hall Effect. (Text 1: 3.1.1, 3.1.2, 3.1.3, 3.1.4, 3.2.1, 3.2.3, 3.2.4, 3.4.1, 3.4.2, 3.4.3, 3.4.5).<\/p>\n

Module-2<\/h4>\n

\nP-N Junctions Forward and Reverse biased junctions- Qualitative description of Current flow at a junction, reverse bias, Reverse bias breakdown- Zener breakdown, avalanche breakdown, Rectifiers. (Text 1: 5.3.1, 5.3.3, 5.4, 5.4.1, 5.4.2, 5.4.3) Optoelectronic Devices Photodiodes: Current and Voltage in an Illuminated Junction, Solar Cells, Photodetectors. Light Emitting Diode: Light Emitting materials.(Text 1: 8.1.1, 8.1.2, 8.1.3, 8.2, 8.2.1)<\/p>\n

Module – 3<\/h4>\n

For the complete Syllabus, results, class timetable, and many other features kindly download the iStudy App<\/a>
It is a lightweight, easy to use, no images, and no pdfs platform to make students’s lives easier.<\/b>
\"Get<\/a>. <\/p>\n

Module-4<\/h4>\n

\nField Effect Transistors Basic pn JFET Operation, Equivalent Circuit and Frequency Limitations, MOSFET- Two terminal MOS structure- Energy band diagram, Ideal Capacitance – Voltage Characteristics and Frequency Effects, Basic MOSFET Operation- MOSFET structure, Current-Voltage Characteristics. (Text 2: 9.1.1, 9.4, 9.6.1, 9.6.2, 9.7.1, 9.7.2, 9.8.1, 9.8.2).<\/p>\n

Module-5<\/h4>\n

\nFabrication of p-n junctions Thermal Oxidation, Diffusion, Rapid Thermal Processing, Ion implantation, chemical vapour deposition, photolithography, Etching, metallization. (Text 1: 5.1) Integrated Circuits Background, Evolution of ICs, CMOS Process Integration, Integration of Other Circuit Elements. (Text 1: 9.1, 9.2, 9.3.1, 9.3.3).<\/p>\n

Course Outcomes:<\/h4>\n

For the complete Syllabus, results, class timetable, and many other features kindly download the iStudy App<\/a>
It is a lightweight, easy to use, no images, and no pdfs platform to make students’s lives easier.<\/b>
\"Get<\/a>. <\/p>\n

Question Paper Pattern:<\/h4>\n

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