Nano-Electronics detail syllabus for Nanoelectronics (Nano), 2017 scheme is taken from VTU official website and presented for VTU students. The course code (17NT81), and for exam duration, Teaching Hr/week, Practical Hr/week, Total Marks, internal marks, theory marks, duration and credits do visit complete sem subjects post given below.
For all other nano 8th sem syllabus for be 2017 scheme vtu you can visit Nano 8th Sem syllabus for BE 2017 Scheme VTU Subjects. The detail syllabus for nano-electronics is as follows.
Course Objectives:
- To understand the basic concepts of nano-electronics
- To learn the techniques which are used for develop devices which are developed by nanotechnology.
Module 1:
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Module 2:
CNT AND NANOELECTRONIC DEVICES Carbon Nanotube: Introduction, properties, characterization and application of carbon nano tube. Introduction to Nano devices: Graphene transistors, Nanowire FET, quantum Dot devices, Quantum Dot FET, Organic transistors, CNTFET, FinFETs. 10
Module 3:
CARBON NANOTUBE FETS Introduction, Single Wall Nano Tube (SWNT), Double Wall Nano Tube (DWCNT), IV characteristics of P-CNTFET, N-CNTFET, small signal model for CNTFET, electrical equivalent of CNTFET, design of inverter using CNTFET, CNTFET based digital and analog circuits, memory cell using CNTFET. 10
Module 4:
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Module 5:
TUNNEL JUNCTIONS Tunnel junctions and applications of tunnelling, tunnelling through potential barrier, potential energy profiles, applications of tunnelling, field emission, gate oxide tunnelling, hot electron effects in MOSFETs, coulomb blockade, blockade in nano capacitor, tunnel junctions, blockade in quantum dot circuits 10
Course Outcomes:
- Students will understand how to design the electronics circuits to work at nanoscale level
- Students can learn how I-V characteristics and other electronic properties may change at nanoscale level.
Graduate Attributes (as per NBA):
- Engineering Knowledge.
- Problem Analysis.
- Design / development of solutions (partly).
- Interpretation of data.
Question paper pattern:
- The question paper will have ten questions.
- Each full Question consisting of 20 marks
- There will be 2 full questions (with a maximum of four sub questions) from each module.
- Each full question will have sub questions covering all the topics under a module.
- The students will have to answer 5 full questions, selecting one full question from each module.
Text Books:
- Niraj K. Jha. (2010) Deming Chen, Nanoelectronic Circuit Design, Springer.
- Goser Karl and Peter Glosekotter. (2004) Nanoelectronics and Nanosystems: From Transistors to Molecular and Quantum Devices, Springer.
- Shareefraza J. Ukkund, Nano-Electronics and Quantum Computation, LAP-Lambert Academic Publishing, Mauritius, 2018, ISBN: 978-613-9-81812-9
- Lundstrom, Mark, Guo, Jing, Nanoscale Transistors: Device Physics, Modelling and Simulation, Springer, 2006.
Reference Books:
- Gregory Timp. (2008) Nanotechnology, AIP Press.
- Colm Durkan. (2007) Current at the Nanoscale, Imperial College Press.
- S. Dutta. (2005) Quantum Transport: Atom to Transistor, Cambridge University Press
For detail syllabus of all other subjects of BE Nano, 2017 scheme do visit Nano 8th Sem syllabus for 2017 scheme.
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