3rd Sem, EIE

Analog Electronic Circuits EIE 3rd Sem Syllabus for VTU BE 2017 Scheme

Analog Electronic Circuits detail syllabus for Electronics & Instrumentation Engineering (Eie), 2017 scheme is taken from VTU official website and presented for VTU students. The course code (17EI33), and for exam duration, Teaching Hr/week, Practical Hr/week, Total Marks, internal marks, theory marks, duration and credits do visit complete sem subjects post given below.

For all other eie 3rd sem syllabus for be 2017 scheme vtu you can visit EIE 3rd Sem syllabus for BE 2017 Scheme VTU Subjects. The detail syllabus for analog electronic circuits is as follows.

Course Objectives:

This course will enable the students

  • With the knowledge of Electronic devices.
  • To know modeling of BJT and FET for analysis and to Design of BJT Amplifier, Hybrid Equivalent and Hybrid Models.
  • To know construction and characteristics of JFETs and MOSFETs.
  • Describe various types of FET biasing, and Demonstrate use of FET amplifiers.
  • Demonstrate and Generalize Frequency response of BJT and FET amplifiers at various frequencies.
  • Analyze Power amplifier circuits in different modes of operation.
  • To know the concept of Feedback and its effect on amplifier circuits and Oscillator circuits-operation and generation of low and high frequency signal using BJT/FET/Op-amp.

Module 1

For complete syllabus and results, class timetable and more pls download iStudy. Its a light weight, easy to use, no images, no pdfs platform to make students life easier.

Module 2

Field Effect Transistors Introduction, Construction and Characteristics of JFETs, Transfer Characteristics, Applying Shockleys Equation. Depletion Type MOSFET: Basic Construction, Basic Operation and Characteristics, P-Channel Depletion Type MOSFET and Symbols, Enhancement Type MOSFET: Basic Construction, Basic Operation and Characteristics, P-Channel Enhancement Type MOSFETs and Symbols. Relevant problems on above topics, CMOS-Basics. FET Biasing Introduction, Fixed-Bias Configuration, Self-Bias Configuration, VoltageDivider Biasing. Relevant problems on above topics

Module 3

FET Amplifiers Introduction, JFET Small Signal Model, JFET AC equivalent Circuit, Fixed-Bias Configuration, Self-Bias Configuration, Voltage-Divider Configuration, Source Follower Configuration. Relevant problems on above topics. BJT and JFET Frequency Response: Introduction, General Frequency Considerations, Low Frequency Response of BJT Amplifier, Low Frequency Response of FET Amplifier, Miller Effect Capacitance, High Frequency Response of FET Amplifier, Multistage frequency effects. Relevant problems on above topics. (Excluding P-spice Analysis.

Module 4

For complete syllabus and results, class timetable and more pls download iStudy. Its a light weight, easy to use, no images, no pdfs platform to make students life easier.

Module 5

Feedback and Oscillator Circuits Feedback Concepts, Feedback Connection Types, Effects of negative feedback, Oscillator operation, Phase Shift Oscillator: FET Phase Shift Oscillator, Transistor Phase Shift Oscillator, Wien Bridge Oscillator, Tuned oscillator Circuit: FET and Transistor Colpitts Oscillator, FET and Transistor Hartley Oscillator, Crystal oscillator. Relevant Problems on above topics Unijunction transistor oscillator.

Course Outcomes:

After studying this course, students will able to:

  • Explain the Working principles, characteristics and basic applications of BJT and FET.
  • Modeling of BJT/FET for analysis
  • Design Single stage, Multistage amplifier, with and without feedback
  • Analyze Frequency response of BJT and FET.
  • Acquire the knowledge of classifications of Power amplifier, operation, and able to design power amplifier.
  • Apply the knowledge gained in the design of BJT/FET circuits in Oscillators to generate different frequency signals.

Graduate Attributes (as per NBA):

  • Engineering Knowledge
  • Problem Analysis
  • Design / development of solutions (partly)
  • Interpretation of data

Question paper pattern:

  • The question paper will have TEN questions.
  • Each full question carry 16 marks
  • There will be TWO full questions (with maximum of THREE sub questions) from each module.
  • Each full question will have sub questions covering all the topics under a module.
  • The students will have to answer FIVE full questions, selecting ONE full question from each module.

Text Books:

  1. Robert L. Boylestad and Louis Nashelsky, Electronics devices and Circuit theory, Pearson, 10th Edition, 2009, ISBN:9788131727003

Reference Books:

  1. David A. Bell, Electronic Devices and Circuits, Oxford University Press.
  2. I. J. Nagrath, Electronics: Analog and Digital, PHI

For detail syllabus of all other subjects of BE Eie, 2017 scheme do visit Eie 3rd Sem syllabus for 2017 scheme.

Dont forget to download iStudy for latest syllabus and results, class timetable and more.

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