18EIL37: Analog Electronic Circuits Lab EIE Syllabus for BE 3rd Sem 2018 Scheme VTU

Analog Electronic Circuits Lab detailed Syllabus for Electronics & Instrumentation Engineering (EIE), 2018 scheme has been taken from the VTUs official website and presented for the VTU students. For Course Code, Subject Names, Teaching Department, Paper Setting Board, Theory Lectures, Tutorial, Practical/Drawing, Duration in Hours, CIE Marks, Total Marks, Credits and other information do visit full semester subjects post given below. The Syllabus PDF files can also be downloaded from the official website of the university.

For all other VTU EIE 3rd Sem Syllabus for BE 2018 Scheme, do visit VTU EIE 3rd Sem Syllabus for BE 2018 Scheme Subjects. The detailed Syllabus for analog electronic circuits lab is as follows.

Course Learning Objectives:

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Laboratory Experiments

The experiments are to be carried using discrete components only

To design and test Full Wave Rectifier (with center tap transformer) with and without filters. L3, l4, L5, L6
To design and test Full Wave Bridge Rectifier with and without filters. L3, l4, L5, L6
To plot characteristics of UJT and to determine its intrinsic stand-off ratio. L1, L2, L3, L4
To design and test the common emitter amplifier (voltage divider bias) without feedback and determine input, output impedance, gain and bandwidth. L3, l4, L5, L6
To design and test the Emitter follower amplifier (BJT) using voltage divider bias and determine input, output impedance, gain and bandwidth. L3, l4, L5, L6
To plot the Drain and Transfer characteristic for the given FET and to find the Drain Resistance and Trans-conductance. L1, L2, L3, L4
To plot the input and output characteristics of n-channel MOSFET and calculatedrain resistance, mutual conductance and amplification factor. L3, l4, L5, L6
To design, test and plot the frequency response of Common Source JFET/MOSFET amplifier, and to determine its bandwidth. L1, L2, L3, L4
Wiring and testing of Complimentary symmetry class B push pull power amplifier and calculation of efficiency. L1, L2, L3, L4
To design and test the RC-Phase shift Oscillator using BJT for the given frequency. L3, L4, L5, L6
To design and test the following tuned oscillator circuits for the given frequency.
1. Hartley Oscillator using BJT
2. Colpitts Oscillator using FET. L3, L4, L5, L6
Testing of crystal oscillator and to determine its frequency of oscillation. L1, L2, L3, L4

Course Outcomes:

After studying this course, students will able to:

Able to design Single stage, Multistage amplifier, with and without feedback
Able to analyze Frequency response of BJT and FET.
Acquire the knowledge of Power amplifiers, operation, and able to design power amplifier.
Apply the knowledge gained in the design of BJT/FET circuits in Oscillators
Knowledge of UJT characteristics and its application.
Applications of theorems in various practical fields.

Graduate Attributes:

Conduct of Practical Examination:

All Lab Experiments are to be included for practical examination.
Students are allowed to pick one experiment from the lot.
Strictly follow the instructions as printed on the cover page of answer script for breakup of marks.
Change of experiment is allowed only once and 15% Marks allotted to the procedure part to be made zero.

Reference Books:

Electronics Lab Manual by K. A. Navas, Volume I, PHI, 5th Edition, 2017, ISBN:9788120351424
Electronics Laboratory Primer – A Design Approach by S.Poorna Chandra, B.Sasikala, S Chand Pub.

For detail Syllabus of all other subjects of BE 3rd Sem Electronics & Instrumentation Engineering, visit (EIE) 3rd Sem Syllabus Subjects.

For all (CBSE & Non-CBSC) BE results, visit VTU BE all semester results direct links.

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