18EC33: Electronic Devices ETE Syllabus for BE 3rd Sem 2018 Scheme VTU

Electronic Devices detailed Syllabus for Electronics & Telecommunication Engineering (ETE), 2018 scheme has been taken from the VTUs official website and presented for the VTU students. For Course Code, Subject Names, Teaching Department, Paper Setting Board, Theory Lectures, Tutorial, Practical/Drawing, Duration in Hours, CIE Marks, Total Marks, Credits and other information do visit full semester subjects post given below. The Syllabus PDF files can also be downloaded from the official website of the university.

For all other VTU ETE 3rd Sem Syllabus for BE 2018 Scheme, do visit VTU ETE 3rd Sem Syllabus for BE 2018 Scheme Subjects. The detailed Syllabus for electronic devices is as follows.

Course Learning Objectives:

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Module-1

Semiconductors Bonding forces in solids, Energy bands, Metals, Semiconductors and Insulators, Direct and Indirect semiconductors, Electrons and Holes, Intrinsic and Extrinsic materials, Conductivity and Mobility, Drift and Resistance, Effects of temperature and doping on mobility, Hall Effect. (Text 1: 3.1.1, 3.1.2, 3.1.3, 3.1.4, 3.2.1, 3.2.3, 3.2.4, 3.4.1, 3.4.2, 3.4.3, 3.4.5).

Module-2

P-N Junctions Forward and Reverse biased junctions- Qualitative description of Current flow at a junction, reverse bias, Reverse bias breakdown- Zener breakdown, avalanche breakdown, Rectifiers. (Text 1: 5.3.1, 5.3.3, 5.4, 5.4.1, 5.4.2, 5.4.3) Optoelectronic Devices Photodiodes: Current and Voltage in an Illuminated Junction, Solar Cells, Photodetectors. Light Emitting Diode: Light Emitting materials.(Text 1: 8.1.1, 8.1.2, 8.1.3, 8.2, 8.2.1)

Module – 3

Module-4

Field Effect Transistors Basic pn JFET Operation, Equivalent Circuit and Frequency Limitations, MOSFET- Two terminal MOS structure- Energy band diagram, Ideal Capacitance – Voltage Characteristics and Frequency Effects, Basic MOSFET Operation- MOSFET structure, Current-Voltage Characteristics. (Text 2: 9.1.1, 9.4, 9.6.1, 9.6.2, 9.7.1, 9.7.2, 9.8.1, 9.8.2).

Module-5

Fabrication of p-n junctions Thermal Oxidation, Diffusion, Rapid Thermal Processing, Ion implantation, chemical vapour deposition, photolithography, Etching, metallization. (Text 1: 5.1) Integrated Circuits Background, Evolution of ICs, CMOS Process Integration, Integration of Other Circuit Elements. (Text 1: 9.1, 9.2, 9.3.1, 9.3.3).

Course Outcomes:

Question Paper Pattern:

Examination will be conducted for 100 marks with question paper containing 10 full questions, each of 20 marks.
Each full question can have a maximum of 4 sub questions.
There will be 2 full questions from each module covering all the topics of the module.
Students will have to answer 5 full questions, selecting one full question from each module.
The total marks will be proportionally reduced to 60 marks as SEE marks is 60

Text Books:

Ben G. Streetman, Sanjay Kumar Banergee, Solid State Electronic Devices, 7thEdition, Pearson Education, 2016, ISBN 978-93-325-5508-2.
Donald A Neamen, Dhrubes Biswas, Semiconductor Physics and Devices, 4thEdition, MCGraw Hill Education, 2012, ISBN 978-0-07-107010-2

Reference Books:

For detail Syllabus of all other subjects of BE 3rd Sem Electronics & Telecommunication Engineering, visit (ETE) 3rd Sem Syllabus Subjects.

For all (CBSE & Non-CBSC) BE results, visit VTU BE all semester results direct links.

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