18BM56: Vlsi Design BME Syllabus for BE 5th Sem 2018 Scheme VTU

Vlsi Design detailed Syllabus for Biomedical Engineering (BME), 2018 scheme has been taken from the VTUs official website and presented for the VTU students. For Course Code, Subject Names, Teaching Department, Paper Setting Board, Theory Lectures, Tutorial, Practical/Drawing, Duration in Hours, CIE Marks, Total Marks, Credits and other information do visit full semester subjects post given below. The Syllabus PDF files can also be downloaded from the official website of the university.

For all other VTU BME 5th Sem Syllabus for BE 2018 Scheme, do visit VTU BME 5th Sem Syllabus for BE 2018 Scheme Subjects. The detailed Syllabus for vlsi design is as follows.

Module 1

For the complete Syllabus, results, class timetable, and many other features kindly download the iStudy App
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Module 2

Basic Electrical Properties of MOS And BiCMOS Circuits: nMOS inverter, Determination of pull up to pull down ratio, nMOS inverter driven through one or more pass transistors, alternative forms of pull up, CMOS inverter, BiCMOS inverters, latch up. Basic Circuit Concepts: Sheet resistance, area capacitance calculation, Delay unit, inverter delay, estimation of CMOS inverter delay, driving of large capacitance loads, super buffers, BiCMOS drivers.

Module 3

MOS and BiCMOS Circuit Design Processes: MOS layers, stick diagrams, nMOS design style, CMOS design style, design rules and layout, X-based design. Scaling of MOS Circuits: scaling factors for device parameters, limitations of scaling.

Module 4

For the complete Syllabus, results, class timetable, and many other features kindly download the iStudy App
It is a lightweight, easy to use, no images, and no pdfs platform to make students’s lives easier.
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Module 5

Design Process-Computational Elements: Regularity, design of ALU subsystem, ALU using adders, carry look ahead adders, Multipliers, serial parallel multipliers, Braun array, Bough-Wooley multiplier. Memory, Register and Aspects of Timing: Three Transistor Dynamic RAM cell, Dynamic memory cell, Pseudo- Static RAM, JK Flip-flop, D Flip-flop circuits, RAM arrays, practical aspects and testability: Some thoughts of performance, optimization and CAD tools for design and simulation.

Course Outcomes:

After studying this course, students will able to;

1. Identify the CMOS layout levels, and the design layers used in the process sequence.
2. Describe the general steps required for processing of CMOS integrated circuits.
3. Design static CMOS combinational and sequential logic at the transistor level.
4. Demonstrate different logic styles such as complementary CMOS logic, pass-transistorLogic, dynamic logic, etc.
5. Interpret the need for testability and testing methods in VLSI.

Question paper pattern:

For the complete Syllabus, results, class timetable, and many other features kindly download the iStudy App
It is a lightweight, easy to use, no images, and no pdfs platform to make students’s lives easier.
.

Text Books:

1. Basic VLSI Design -3rd Edition, Douglas APucknell, Kamaran Eshraghian, Prentice Hall of India publication, 2005.

Reference Books:

1. CMOS Digital Integrated Circuits, Analysis And Design, 3rd Edition, Sung-Mo (Steve) Kang, Yusuf Leblbici, Tata McGraw Hill, 2002.
2. VLSI Technology-S.M. Sze, 2nd edition Tata McGraw Hill, 2003.

For detail Syllabus of all other subjects of BE 5th Sem Biomedical Engineering, visit (BME) 5th Sem Syllabus Subjects.

For all (CBSE & Non-CBSC) BE results, visit VTU BE all semester results direct links.