Semiconductor Devices Lab detail DTE Kar Diploma syllabus for Electronics And Communication Engineering (EC), C15 scheme is extracted from DTE Karnataka official website and presented for diploma students. The course code (15EC22P), and for exam duration, Teaching Hr/week, Practical Hr/week, Total Marks, internal marks, theory marks, duration and credits do visit complete sem subjects post given below. The syllabus PDFs can be downloaded from official website.
For all other electronics 2nd sem syllabus for diploma c15 scheme dte karnataka you can visit Electronics 2nd Sem Syllabus for Diploma C15 Scheme DTE Karnataka Subjects. The detail syllabus for semiconductor devices lab is as follows.
Pre-requisites:
Basic Knowledge of electronic components and devices theory
Course Objectives:
Evaluate the operational characteristics of semiconductor devices
Course Outcomes:
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UNIT -1: Tutorials and Graded Exercises Duration: 69Hr
- Familiarization of precautions to be taken while using instruments like multimeter, ammeter, voltmeter, signal generator, CRO, Regulated power supply etc. 3
- Identification of semiconductor devices and their leads like transistor, FET, DIAC, TRIAC, diode, UJT, SCR etc. 3
- Testing of devices(diode, transistoretc) using multimeter 3
- Familiarization of any simulation software (preferably open source. 3
- Determination of knee voltage and forward dynamic resistance of a junction diode 3
- Determination of the Reverse Characteristic curve of Zener diode 3
- Demonstration of Zener diode as a voltage regulator 3
- Determination of the input characteristics of BJT in CE configuration. 3
- Determination of the output characteristics of BJT in CE configuration and calculation of ‘0’. 3
- Determination of the input characteristics of BJT in CB configuration. 3
- Determination of the output characteristics of BJT in CB configuration and calculation of ‘a’. 3
- Determination of the reverse characteristics of a Photodiode. 3
- Determination of the output characteristics of Photo Transistor. 3
- Determination of the Transfer characteristics of enhancement MOSFET and determine threshold voltage 3
- Demonstration of BJT as a switch to control LED 3
- Demonstration of MOSFET as a switch to control LED 3
- Determination of the V-I Characteristics of UJT. 3
- Determination of the V-I Characteristics of SCR. 3
- Determination of the V-I Characteristics of DIAC 3
- Determination of the V-I Characteristics of TRIAC 3
- One open-ended experiment of similar nature and magnitude of the above 3
UNIT – II: Project Activities [CIE- 05 Marks] Duration: 9Hr
- Collect specification and prepare charts displaying symbols of semiconductor devices (At least 10 devices and at least 10 variants in each category). 4
- Open-ended activity like
- Obtain characteristics of a diode under simulated environment and determine knee voltage, forward and reverse dynamic resistance and PIV.
- Create a circuit to blink two LEDs alternatively with a noticeable delay.
- Any other such activities that can contribute for the student’s knowledge in respect of this course. 5
Execution Mode
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Reference Books:
- Electronics laboratory primer, S. Poorna Chandra, B.Sasikala, S. Chand Technical Publication. ISBN 81-219-2459-6
- Fundamentals of Electronic Devices and Circuits Laboratory Manual ,David A. Bell Oxford University Press, ISBN 978-0-19-542988-6
- Electronic Devices,Thomas L Floyd,ISBN10: 8177586432
Course Delivery:
The course will be delivered through tutorials of two hours and four hours of hands on practice per week
Scheme of Evaluation for End-exam
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Note:
- Candidate shall submit Lab record for the examination.
- Student shall be allowed to conduct directly even if she/he is unable to write the procedure.
Laboratory Resource Requirements
Hardware Requirements:For a batch of 20 students.
- Dual Channel 0-30V at 2/1A RPS with short circuit protection 10
- 0-30V at 2/1A RPS with short circuit protection 10
- Function Generator (0-10MHz. 10
- Dual Trace Oscilloscope (=>20MHz). 10
- Digital multimeters 20
- Analog multimeters 10
- Decade resistance boxes 10
- Decade capacitance boxes 10
- Decade inductance boxes 10
- LCR meter 05
- Electronic components -resistors, inductors, capacitors, transformers, hookup wires ,SCR,MOSFET, DIAC,TRIAC,BJT, Photo transistor, Photo diode, JFET, diode, Zener diode, soldering leadetc L/S
- Bread boards, Soldering Gun, Tag Board, 9V battery cells, Bulbs. L/S
Model Questions for Practice and Semester End Examination
- Determine the knee voltage and forward dynamic resistance of a given junction diode.
- Experimentally determine the forward characteristics of a junction diode.
- Determine the reverse Characteristics of a given Zener diode
- Demonstrate how a Zener diode regulates voltage.
- Determine the input characteristics of a given NPN transistor in CE configuration.
- Demonstrate the method of determining output characteristics of a BJT in CE configuration and determination of ‘0’.
- Determine the output characteristics of a given BJT in CB configuration
- Determine ‘a’ of a given transistor with the help of an experiment
- Determine ‘0’of a given transistor in with the help of an experiment.
- Determine the reverse characteristics of a given Photodiode.
- Determine the output characteristics ofa given Photo Transistor.
- Determine the transfer characteristics of a given MOSFET and its threshold voltage.
- Demonstrate the use of BJT as a switch to control LED.
- Show how an LED can be controlled using BJT.
- Conduct an experiment to control the LED using MOSFET.
- Sketch the V-I characteristics of a given UJT with the help of an experiment.
- Show how gate current influences forward break over voltage of an SCR
- Determine peak point and valley point voltages of a given UJT with the help of an experiment
- Determine the V-I Characteristics of a given DIAC.
- Determine the V-I Characteristics of a given TRIAC
For detail syllabus of all other subjects of BE Electronics, C15 scheme do visit Electronics 2nd Sem syllabus for C15 scheme.
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