15EC21T: Basics of Semiconductor Devices Electronics 2nd Sem Syllabus for Diploma DTE Karnataka C15 Scheme

Basics of Semiconductor Devices detail DTE Kar Diploma syllabus for Electronics And Communication Engineering (EC), C15 scheme is extracted from DTE Karnataka official website and presented for diploma students. The course code (15EC21T), and for exam duration, Teaching Hr/week, Practical Hr/week, Total Marks, internal marks, theory marks, duration and credits do visit complete sem subjects post given below. The syllabus PDFs can be downloaded from official website.

For all other electronics 2nd sem syllabus for diploma c15 scheme dte karnataka you can visit Electronics 2nd Sem Syllabus for Diploma C15 Scheme DTE Karnataka Subjects. The detail syllabus for basics of semiconductor devices is as follows.

Pre-requisites:

Knowledge of physics and principles of electrical engineering.

Course Objectives:

Acquire the fundamental knowledge and expose to the field of semiconductor theory and devices and their Applications.

Course Outcomes:

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UNIT – 1:Introduction to Semiconductor Devices Duration: 11Hr

Semiconductor Physics:
Atomic structure, Neil Bohr’s atomic theory, definition of conductors, insulators and semiconductors, energy level diagrams.
Semiconductors:
Classification and types, intrinsic and extrinsic, P-type and N-type semiconductors, majority and minority carriers, recombination, effect of temperature.
PN junction:
Formation, depletion region, barrier potential, reverse breakdowns, PN junction as diode, symbol, biasing modes, V-I characteristics, reverse saturation current, diode current equation, effect of temperature on diode current, ideal diode, basic diode ratings.
Zener diode:
Symbol, Principle, Zener breakdown, V-I characteristics .
Application of Diodes:
diode as a switch, voltage regulator.

UNIT – 2: Bipolar Transistors Duration: 10 Hr

Transistor Basics:
Definition, formation of transistor-PNP and NPN, symbols, working principle, transistor current equation.
Modes of operation:
CB, CE and CC Configuration modes, input and output characteristics in CB and CE configuration, definition of Ri& Ro, a, P, and y relation between them, simple problems, comparison of CB, CE and CC modes.
Applications:
switch and amplifier in CE configuration, thermal runaway, role of heat sinks.

UNIT -3:Field Effect Transistor Duration: 10 Hr

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UNIT – 4:Special Semiconductor Devices Duration: 08Hr

Physical structure, Working principle, characteristic curves, symbol and Applications of following semiconductor devices: UJT, SCR, DIAC and TRIAC. Features of varactor, tunnel diode, Gunn diode, PIN diode, and Schottky diode.

UNIT -5: Fabrication of Integrated ICs Duration: 06Hr

Definition and need of IC’s, advantages and disadvantages, classification of ICs based on structure, scale of integration, function. Fabrication process of monolithic ICs. Fabrication of diode and capacitor.

UNIT-6: Opto-semiconductor Devices Duration: 07 Hr

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Reference Books:

1. Principles of Electronics, RohitMehta&V K Mehta, S. Chand Publishing ISBN: 9788121924504
2. Electronic Devices and Circuits, David A. Bell, Oxford University Press, ISBN: 9780195693409
3. Fundamentals of Electrical and Electronics Engineering, B. L. Theraja, S. Chand and Company. REPRINT 2013, ISBN 8121926602.
4. http://www.electronics-tutorials.ws

Course Delivery:

The course will be delivered through lectures, presentations and support of modern tools.

Model Question Paper:

(CIE)

1. State the properties of semiconductors
2. Describe the use of PN junction diode as switch

OR List the specifications of a PN junction diode

3. Explain the working principle of NPN transistor
4. Sketch and explain the input characteristics of CE mode

OR Explain the working principle of a transistor

Model Question Paper:

Part A

1. Compare the features of insulators, conductors and semiconductors.
2. Define alpha & beta; evaluate beta in terms of alpha
3. Explain how transistor can work as a switch
4. Distinguish between BJT and JFETs.
5. Deduce the relation between gm, rd and p
6. List the features of TRIAC.
7. Tabulate advantages and disadvantages of ICs.
8. Define Photo emissive, Photoconductive and photovoltaic effect
9. List the Applications of phototransistors.

Part B

1. Explain how Zener diode can act as a voltage regulator. (5)
2. Explain how diode can be used as electronic switch. (5)
1. Describe how doping helps to increase current conduction in n-type semiconductor.(6)
2. Define barrier potential and reverse saturation current. (4)
1. Justify the transistor current equation IE=IB+IC. (4)
2. Compare CE and CB modes of transistors. (6)
1. Explain the need for heat sink in electronic devices.(6)
2. Calculate the current gain in CB mode given that Ib=10^A and Io=5mA.(4)
1. Explain the working of N-channel JFET(5)
2. Compare enhancement and depletion MOSFETS (5)
1. List the features of CMOS (5)
2. Explain the working of CMOS inverter (5)
7. Explain the working principle of SCR and list its Applications.
1. List the features of varactor diode. (6)
2. Define valley and peak voltages as applicable to UJT. (4)
9. Describe the steps involved in fabrication of diode in monolithic ICs.
1. Explain the operation of LASER
2. List the features of LED bulbs.

For detail syllabus of all other subjects of BE Electronics, C15 scheme do visit Electronics 2nd Sem syllabus for C15 scheme.

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