{"id":5750,"date":"2020-02-08T07:46:09","date_gmt":"2020-02-08T07:46:09","guid":{"rendered":"https:\/\/www.inspirenignite.com\/up\/electronics-engineering-ie-4th-sem-syllabus-for-aktu-b-tech-2019-20-scheme-select-subject-3\/"},"modified":"2020-02-08T07:46:09","modified_gmt":"2020-02-08T07:46:09","slug":"electronics-engineering-ie-4th-sem-syllabus-for-aktu-b-tech-2019-20-scheme-select-subject-3","status":"publish","type":"post","link":"https:\/\/www.inspirenignite.com\/up\/electronics-engineering-ie-4th-sem-syllabus-for-aktu-b-tech-2019-20-scheme-select-subject-3\/","title":{"rendered":"Electronics Engineering IE 4th Sem Syllabus for AKTU B.Tech 2019-20 Scheme (Select Subject-3)"},"content":{"rendered":"

Electronics Engineering detail syllabus for Instrumentation Engineering (IE), 2019-20 scheme is taken from AKTU<\/a> official website and presented for AKTU students. The course code (KOE048), and for exam duration, Teaching Hr\/Week, Practical Hr\/Week, Total Marks, internal marks, theory marks, and credits do visit complete sem subjects post given below.<\/p>\n

For all the other ie 4th sem syllabus for b.tech 2019-20 scheme aktu you can visit IE 4th Sem syllabus for B.Tech 2019-20 Scheme AKTU Subjects<\/a>. For all the other Select Subject-3 subjects do refer to Select Subject-3<\/a>. The detail syllabus for electronics engineering is as follows.<\/p>\n

Unit I<\/h4>\n

PN junction diode: Introduction of semiconductor materials; Semiconductor diode: Depletion layer, V-I characteristics, ideal and practical, diode resistance, capacitance, diode equivalent circuits, transition and diffusion capacitance, Zener diodes breakdown mechanism (Zener and avalanche).\n<\/p>\n

Unit II<\/h4>\n

For complete syllabus, results, class timetable and more kindly download iStudy<\/a>. It is a lightweight, easy to use, no images, no pdfs platform to make student’s life easier.<\/b><\/p>\n

Unit III<\/h4>\n

Bipolar junction transistors and field effect transistor: Bipolar junction transistor: Transistor construction, operation, amplification action, common base, common emitter, common collector configuration dc biasing BJTs: operating point, fixed-bias, emitter bias, voltage-divider bias configuration. Collector feedback, emitter-follower configuration. Bias stabilization. CE, CB, CC amplifiers and AC analysis of single stage CE amplifier (re Model), Field effect transistor: Construction and characteristic of JFETs. AC analysis of CS amplifier, MOSFET (depletion and enhancement) type, transfer characteristic.\n<\/p>\n

Unit IV<\/h4>\n

Operational amplifiers: Introduction and block diagram of Op-Amp, ideal & practical characteristics of Op-Amp, differential amplifier circuits, practical Op-Amp circuits (inverting amplifier, non-inverting amplifier, unity gain amplifier, summing amplifier, integrator, differentiator), OpAmp parameters: input offset voltage, output offset voltage, input biased current, input offset current differential and common-mode operation.\n<\/p>\n

Unit V<\/h4>\n

For complete syllabus, results, class timetable and more kindly download iStudy<\/a>. It is a lightweight, easy to use, no images, no pdfs platform to make student’s life easier.<\/b><\/p>\n

Course Outcomes:<\/h4>\n

At the end of this course students will demonstrate the ability to:<\/p>\n