Micro-Electronics Microelectronics 6th Sem BTEUP Syllabus 2019-2020

Micro-Electronics detail syllabus for Electronics Engineering (Microelectronics), effective from 2019-2020, is collected from BTEUP 2017 Syllabus official website and presented for diploma students. PDF download is possible from official site but you can download the istudy mobile app for syllabus on mobile. The course details such as exam duration, Teaching Hr/week, Practical Hr/week, Total Marks, internal marks, theory marks, duration and credits do visit complete sem subjects post given below.

For all other bteup syllabus 6th sem microelectronics 2019-2020 you can visit BTEUP Syllabus 6th Sem Microelectronics 2019-2020 Subjects. For all other elective subjects do refer to Electives. The detail syllabus for micro-electronics is as follows.

Rationale:

This subject includes an exposure in micro electronics industries, job opportunities are available in the area of designing, fabrication, production and maintenance of electronics devices. The knowledge of microelectronics systems allows opportunities with ICs fabrication industries. Microelectronics is the latest trust area in the chip technology, in the field of communication with vast opportunities in the private sector.

Learning Outcomes:

After completion of the course, the students should be able to:

• identify and demonstrate operating principles and typical applications Micro electronics and their applications in modern society
• understand the fabrication techniques and wafer preparation
• describe the various types of analog and digital circuit design
• know the basic principle of struct and operation of MOS Ic’s
• testing and Bonding of IC’s

1. INTRODUCTION :

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2. FABRICATION PROCESS

Lattice matching, Need for epitaxy, Vapour phase epitaxy, Liquid phase epitaxy and Molecular-Beam epitaxy, Silicon on insulators.

OXIDATION & POLYSILICON FILM DEPOSITION :

Thermal oxidation, Dietectric and Polysilicon deposition, Metallization& it’s Application, Masking

DIFFUSION & ION INPLATATION :

Basic diffusion,, Distribution and range of implanted inons, Annealings and activation of dopants, Ficks law of diffusion, Range theory.

LITHOGRAPHY &ETCHING :

Optical lithography, X-ray litho graphy, Ion lithography, Electron beam lithography, Introduction to Nano lithography, Wet chemical etching, Dry chemical etching.

3. DISCRETE DEVICE FABRICATION :

Fabrication of p-n junction, Bipolar junction transistor, JFET., MOSFET, CMOS Fabrication(P-well, N-well & Twin top Process)

INTRODUCTION TO MOS:

MOS, CMOS IC technology, MEtal Gate, Poly Silicon Gate, P- Channel, N-Channel Devices, Enhancement Mode and Depletion mode, Devices and their characteristics

4. INTEGRATED CIRCUITS :

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5. DESIGNING OF ANALOG AND DIGITAL CIRCUITS

Basic circuit for analog and digital ICs,functional elements available in the market. CMOS Logic Circuits – Inverter , Two Input NOR Gate , Two Input NAND Gate.
Analog circuits – single stage CE Amplifier and Emitter Follower .

List of Experiments:

1. Study ofCircuitLogixSoftware.
2. To construct a clipper and a clamper circuit using Semiconductor diode.
3. To construct a voltage regulator using a Zener diode.
4. To verify input characteristics and output characteristics of BJT in common-emitter configuration for 5 mA, 2mA.
5. Study of an Inverter with given specifications and verifying the following
1. Schematic-
1. DC Analysis
2. Transient Analysis
2. Layout –
1. DRC
2. LVS
3. RCX
6. Study of a Common Drain Amplifier with given specifications and verify the following
1. Schematic-
1. DC Analysis
2. AC Analysis
3. Transient Analysis
2. Layout –
1. DRC
2. LVS
3. RCX
7. Study of Drain characteristics and Transfer characteristics of JFET.
8. Study of Drain characteristics and Transfer characteristics of MOSFET.
9. Realization of basic gates using Universal logic gates.
10. Code conversion circuits- BCD to Excess-3 and vice-versa.
11. Four-bit parity generator and comparator circuits.
12. Construction of simple Decoder and Multiplexer circuits using logic gates.
13. Construction of simple arithmetic circuits- Adder, Subtraction.
14. Realization of RS-JK and D flip-flops using Universal logic gates.
15. Realization of Universal Register using JK flips-flops and logic gates.

NOTE

For complete syllabus and results, class timetable and more pls download iStudy. Its a light weight, easy to use, no images, no pdfs platform to make students life easier.

Instructional Strategy:

Microwave and radar engineering is very important subject and requires both theoretical as well as practical exposure. The teaching should be supplemented by visits to the microwave stations and using suitable audio visual aids.

Means of Assessment:

1. Assignments and quiz/class tests, mid-term and end-term written tests, model/prototype making
2. Actual laboratory and practical work, model/prototype making, assembly and disassembly exercises and viva-voce

RECOMMENDED BOOKS

1. S. M. Sze – VLSI Technology- Tata McGraw Hill-IInd Ed.
2. Campbell, Stephen A- The Science & Engineering of Microelectronic Fabrication- Oxford university Press.
3. S. Gandhi-VLSI Fabrication Principle- John Wiley
4. Puckness Douglas A, Eshraghiaw Kamran “Basic VLSI Design” – Prentice Hall (India)

For detail syllabus of all other subjects of BE Microelectronics, 2019-2020 scheme do visit Microelectronics 6 syllabus for 2019-2020 Scheme.

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