Electronic Components and Devices Microelectronics 1st Sem Syllabus for Diploma BTEUP 2017

Electronic Components and Devices detail BTEUP Diploma syllabus for Electronics Engineering (Microelectronics), effective from 2017 is collected from BTEUP 2017 Syllabus official website and presented for diploma students. The course details such as exam duration, Teaching Hr/week, Practical Hr/week, Total Marks, internal marks, theory marks, duration and credits do visit complete sem subjects post given below. The syllabus PDFs can be downloaded from official website.

For all other microelectronics 1st sem bteup diploma syllabus 2017 you can visit Microelectronics 1st Sem BTEUP Diploma Syllabus 2017 Subjects. The detail syllabus for electronic components and devices is as follows.

1. Introduction to Electronics (06 Periods)

1. Application of electronic in different fields.
2. Brief introduction to active components and devices.

2. Passive Components (12 Periods)

1. Resistor- Working characteristics/properties, Resistors-Carbon film, metal-film, carbon composition, wire wound and variable type (presets and potentiometers) constructional details, characteristics (size, voltage, tolerance temperature and frequency dependence) , noise consideration, specification, Testing, mutual comparison and typical applications, Voltage Dependent Resistor (VDR).
2. Capacitors- Working characteristics/properties, Capacitors-polyester, Metalized polyester, ceramic paper mica and electrolytic tantalum and solid aluminium types; construction details and testing, specifications, mutual comparison & typical applications.
3. Inductors, Transformers and RF coils- Working characteristics/properties Methods of manufacture of inductors, RF coils and small power and AF transformer and their testing, Properties of cores, Needs and type of shielding.

3. Voltage And Current Sources (06 Periods)

For complete syllabus and results, class timetable and more pls download iStudy Syllabus App. It’s a lightweight, easy to use, no images, no pdfs platform to make students life easier.

4. Semiconductor Diode (12 Periods)

1. P-N junction diode, Mechanism of current flow in P-N junction, drift and diffusion currents, depletion layer, potential barriers, P-N junction diode characteristics, Zener& avalanche breakdown, Concept of junction capacitance in forward & reverse bias conditions.
2. Semiconductor diode characteristics, dynamic resistance & their calculation from diode characteristics, dynamic resistance of diode in terms of diode current, Variation of leakage current and forward voltage with temperature (No derivations).
3. Diode (P-N Junction) as rectifier, Half wave rectifier, full wave rectifier including bridge rectifier, relationship between D.C output voltage and A.C input voltage, rectification efficiency and ripple factor for rectifier circuits, filter circuits- shunt capacitor, series inductor, bleeder resistance, working of the filter and typical application of each type
4. Different types of diodes, characteristics and typical application of power diodes, zener diodes, varactor diodes, point contact diodes, tunnel diodes, LEDs and photo diodes
5. Important specification of rectifier diode and zener diode.

5. Introduction to Bipolar Transistor: (12 Periods)

1. Concept of bipolar transistor as a two junction three terminal device having two kinds of charge carriers, PNP an NPN transistor, their symbol and mechanism of current flow, explanation of fundamental current relations, Concept of leakage current, effect of temperature on leakage current, Standard notation for current and voltage polarity.
2. CB, CE and CC configurations.
1. Common base configuration (CB): input and output characteristics, determination of transistor parameters (input and output) dynamic resistance, current amplification factor.
2. Common emitter configuration (CE): current relations in CE configuration, collector current in term of base current and leakage current (ICEO) relationship between the leakage current in CB and CE configuration , input and output characteristics, determination of dynamic input and output resistance and current amplification factor 0 from the characteristics.
3. Common collector configuration (CC): Expression for emitter current in terms of base current and leakage current in CC configuration.
3. Comparison of CB and CE configuration with regards to dynamic input and output resistance, current gain and leakage current performance of CE configuration for low frequency voltage amplification, Typical application of CB configuration in amplification.
4. Transistor as an amplifier in CE configuration.
1. DC load line, its equation and drawing it on collector characteristics.
2. Determination of small signal voltage and current gain of basic transistor amplifier using CE output characteristics and DC load line, Concept of power gain as a product of voltage gain and current gain.

6. Transistor Biasing And Stabilization Of Operating Point (09 Periods)

For complete syllabus and results, class timetable and more pls download iStudy Syllabus App. It’s a lightweight, easy to use, no images, no pdfs platform to make students life easier.

7. Single Stage Transistor Amplifier (09Periods)

1. Analysis of Single Stage CE, CB and CC amplifier.
2. Single stage CE amplifier circuits with proper biasing components.

8. Field Effect Transistor (Fet) (06 Periods)

1. Construction, operation, characteristics and Biasing of Junction FET.
2. Analysis of Single Stage CS,CG and CD amplifiers. (Only Brief Idea)

9. MOSFET (06 Periods)

For complete syllabus and results, class timetable and more pls download iStudy Syllabus App. It’s a lightweight, easy to use, no images, no pdfs platform to make students life easier.

10. CMOS (06 Periods)

1. Construction, operation and Characteristics of CMOS in both depletion and enhancement modes.
2. Use of CMOS as Invertor, Different application of CMOS, CMOS IC.
3. Comparison of JEET, MOSFET and Bipolar Transistor.

Text Books:

1. Bhargava, Kulshreshtha & Gupta – ‘Baisc Electronics & Linear Circuits’ – Tata Mcgraw-Hill.
2. Malvino, A. P. – “Electrinics Principles” – Tata Mcgraw- Hill.
3. Sedra, Adel S. Smith, Kenneth. C. ‘Micro Electronics Circuits’ – Oxford University Press 5th Edtion
4. Sombir Sing – Electronic Components Devices- Jai Prakesh Nath Publication Meerut

List of Experiments:

1. Semiconductor diode characteristics :
1. Identifications of types of packages, terminals and noting different ratings using data books for various types of semiconductor diodes (Germanium, point contact, silicon low power and high power and switching diode).
2. Plotting of forward V-I characteristics for a point contact and junction P-N diode ( Silicon & Germanium diode).
2. Rectifier circuits using semiconductor diode, measurement of input and output voltage and plotting of input and output wave shapes
1. Half wave rectifier.
2. Full wave rectifier (centre tapped and bridge rectifier circuits)
3. To Plot forward and reverse V-I characteristics for a zener diode.
4. To Plot wave shapes of a full wave rectifier with shunt capacitor, series inductor and n filter circuit.
5. To Plot the input and output characteristics and calculation of parameters of a transistor in common base configuration.
6. To Plot input and output characteristics and calculation of parameters of a transistor in common emitter configuration
7. Transistor Biasing circuits
1. Measurement of operating point (Ic & Vce) for a fixed bias circuit.
2. Potential divider biasing circuits. (Measurement can be made by changing the transistor in the circuits by another of a same type number.
8. Plot the FET characteristics and determination of its parameters from these characteristics.
9. Measurement of voltage gain and plotting of the frequency response curve of a JFET amplifier circuits.
10. Measurement of voltage gain and plotting of the frequency response curve of a MOSFET amplifier circuits.
11. Single stage Common Emitter Amplifier Circuits
1. Measurement of voltage gain at 1 KHZ for different load resistance.
2. Plotting of frequency response of a single stage amplifier circuit.
3. Measurement of input and output impedance of the amplifier circuit.
12. Familarization with lan instrument(Multimeter/CRO), etc.

For detail syllabus of all other subjects of BE Microelectronics, effective from 2017 do visit Microelectronics 1st Sem BTEUP syllabus for 2017.

Dont forget to download iStudy Syllabus App for latest syllabus and results, class timetable and more.