Electronic Components and Devices Electrical & Electronics 1st Sem Syllabus for Diploma BTEUP 2018

Electronic Components and Devices detail BTEUP Diploma syllabus for Electrical & Electronics Engineering, effective from 2018, is collected from BTEUP 2017 Syllabus official website and presented for diploma students. The course details such as exam duration, Teaching Hr/week, Practical Hr/week, Total Marks, internal marks, theory marks, duration and credits do visit complete sem subjects post given below. The syllabus PDFs can be downloaded from official website.

For all other electrical & electronics 1st sem bteup diploma syllabus 2018 you can visit Electrical & Electronics 1st Sem BTEUP Diploma Syllabus 2018 Subjects. The detail syllabus for electronic components and devices is as follows.

Rationale:

Knowledge of Electronic components & devices is quite essential for a student of electronic engineering diploma programme. With the knowledge of these active and passive components he will work successful in every field of the branch. Therefore a diploma student in electronics engineering must be equipped with the fundamental knowledge about electronic components, voltage and current source, semi conductor diode, transistors and FET for successful handling of industrial problems.

DETAILED CONTENTS

1. Introduction to Electronics (06 Periods)

1. Application of electronic in different fields.
2. Brief introduction to active components and devices.

2. Passive Components (12 Periods)

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3. Voltage And Current Sources (06 Periods)

1. Concept of constant voltage sources, symbol and graphical representation, characteristics of ideal and practical voltage sources.
2. Concept of constant current source, symbol and graphical representation, characteristics of ideal and practical current sources.
3. Conversion of voltage sources into a current sources and vice-versa.
4. Concept of floating and grounded D.C. supplies.

4. Semiconductor Diode (12 Periods)

1. P-N junction diode, Mechanism of current flow in P-N junction, drift and diffusion currents, depletion layer, potential barriers, P-N junction diode characteristics, Zener& avalanche breakdown, Concept of junction capacitance in forward & reverse bias conditions.
2. Semiconductor diode characteristics, dynamic resistance & their calculation from diode characteristics, dynamic resistance of diode in terms of diode current, Variation of leakage current and forward voltage with temperature (Noderivations).
3. Diode (P-N Junction) as rectifier, Half wave rectifier, full wave rectifier including bridge rectifier, relationship between D.C output voltage and A.C input voltage, rectification efficiency and ripple factor for rectifier circuits, filter circuits- shunt capacitor, series inductor, bleeder resistance, working of the filter and typical application of each type
4. Different types of diodes, characteristics and typical application of power diodes, zener diodes, varactor diodes, point contact diodes, tunnel diodes, LEDs and photo diodes
5. Important specification of rectifier diode and zener diode.

5. Introduction to Bipolar Transistor: (12 Periods)

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6. Transistor Biasing And Stabilization Of Operating Point (09 Periods)

1. Different transistor biasing circuits for fixing the operating points, effect of temperature on operating point. Need and method for stabilization of operating point. Effect of fixing operating point in cut-off or saturation region on performance of amplifier
2. Calculation of operating point for different biasing circuits, use of Thevenin’s theorem in analyzing potential divider biasing circuit.
3. Simple design problems on potential divider biasing circuits.

7. Single Stage Transistor Amplifier (09Periods)

1. Analysis of Single Stage CE, CB and CC amplifier.
2. Single stage CE amplifier circuits with proper biasing components.

8. Field Effect Transistor (Fet) (06 Periods)

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9. MOSFET (06 Periods)

1. Construction, operation, Characteristics and Biasing of MOSFET in both depletion and enhancement modes.
2. Analysis of Single Stage CS, CG and CD amplifiers. (Only Brief Idea)

10. CMOS (06 Periods)

1. Construction, operation and Characteristics of CMOS in both depletion and enhancement modes.
2. Use of CMOS as Invertor, Different application of CMOS, CMOS IC.
3. Comparison of JEET, MOSFET and Bipolar Transistor.

Text Books:

1. Bhargava, Kulshreshtha & Gupta – ‘Baisc Electronics & Linear Circuits’ – Tata Mcgraw-Hill.
2. Malvino, A. P. – “Electrinics Principles” – Tata Mcgraw- Hill.
3. Sedra, Adel S. Smith, Kenneth. C. ‘Micro Electronics Circuits’ – Oxford University Press 5th Edtion
4. Sombir Sing – Electronic Components Devices- Jai Prakesh Nath Publication Meerut

List of Experiments:

1. Semiconductor diode characteristics :
1. Identifications of types of packages, terminals and noting different ratings using data books for various types of semiconductor diodes (Germanium, point contact, silicon low power and high power and switchingdiode).
2. Plotting of forward V-I characteristics for a point contact and junction P-N diode ( Silicon & Germaniumdiode).
2. Rectifier circuits using semiconductor diode, measurement of input and output voltage and plotting of input and output wave shapes
1. Half wave rectifier.
2. Full wave rectifier (centre tapped and bridge rectifiercircuits)
3. To Plot forward and reverse V-I characteristics for a zener diode.
4. To Plot wave shapes of a full wave rectifier with shunt capacitor, series inductor and n filter circuit.
5. To Plot the input and output characteristics and calculation of parameters of a transistor in common base configuration.
6. To Plot input and output characteristics and calculation of parameters of a transistor in common emitter configuration
7. Transistor Biasing circuits
1. Measurement of operating point (Ic & Vce) for a fixed bias circuit.
2. Potential divider biasing circuits. (Measurement can be made by changing the transistor in the circuits by another of a same type number.
8. Plot the FET characteristics and determination of its parameters from these characteristics.
9. Measurement of voltage gain and plotting of the frequency response curve of a JFET amplifier circuits.
10. Measurement of voltage gain and plotting of the frequency response curve of a MOSFET amplifier circuits.
11. Single stage Common Emitter Amplifier Circuits
1. Measurement of voltage gain at 1 KHZ for different load resistance.
2. Plotting of frequency response of a single stage amplifier circuit.
3. Measurement of input and output impedance of the amplifier circuit.
12. Familarization with lan instrument(Multimeter/CRO), etc.

For detail syllabus of all other subjects of BE Electrical & Electronics, effective from 2018 do visit Electrical & Electronics 1st Sem BTEUP syllabus for 2018.

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