EC 15 D: Nano Electronics Syllabus for ET 4th Sem 2017 DBATU (Elective-III)

Nano Electronics detailed syllabus scheme for Electronics & Telecommunication Engineering (ET), 2017 onwards has been taken from the DBATU official website and presented for the Bachelor of Technology students. For Subject Code, Course Title, Lecutres, Tutorials, Practice, Credits, and other information, do visit full semester subjects post given below.

For 4th Sem Scheme of Electronics & Telecommunication Engineering (ET), 2017 Onwards, do visit ET 4th Sem Scheme, 2017 Onwards. For the Elective-III scheme of 4th Sem 2017 onwards, refer to ET 4th Sem Elective-III Scheme 2017 Onwards. The detail syllabus for nano electronics is as follows.

Nano Electronics Syllabus for Electronics & Telecommunication Engineering (ET) 2nd Year 4th Sem 2017 DBATU

Course Objectives:

For the complete syllabus, results, class timetable, and many other features kindly download the iStudy App
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Course Outcomes:

1. Students will achieve basics knowledge of engineering in the field Nano electronics.
2. Basic knowledge of MOSFET, FINFET, SOI-MOSFET which are new generation transistor technology.
3. Students will get ability to research and development in field of Nano electronics Devices and Materials which is recent trends in technology.
4. With the knowledge of this course students will be the part of emerging trends of Nano electronics devices.
5. This provides information all the recent applications, Engineering Tools and research views to the students.

Unit 1

Overview Nano Technology
Nano devices, Nano materials, Nano characterization, Definition of Technology node, Basic CMOS Process flow.

Unit 2

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Unit 3

SOI (Silicon on insulator)
Metal gate transistor: Motivation, requirements Integration Issues, Transport in Nano MOSFET, velocity saturation, ballistic transport, injection velocity, velocity overshoot, SOI – PDSOI and FDSOI, Ultrathin body SOI – double gate transistors, integration issues.

Unit 4

Properties of Nano devices
Vertical transistors -Fin FET and Surround gate FET. Metal source/drain junctions – Properties of schotky functions on Silicon, Germanium and compound semiconductors -Work function pinning.

Unit 5

For the complete syllabus, results, class timetable, and many other features kindly download the iStudy App
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Unit 6

Characterization techniques for Nano materials
FTIR, XRD, AFM, SEM, TEM, EDAX Applications and interpretation of results, Emerging nano material, nano tubes, Nano rods and other Nano structures, LB technique, Soft lithography Microwave assisted synthesis, Self assembly.

Reference/Text Book:

1. Fundamentals of Modern VLSI Devices, Y. Taur and T. Ning, Cambridge University Press.
2. Silicon VLSI Technology, Plummer, Deal, Griffin, Pearson Education India.
3. Encyclopedia of Materials Characterization, Edited by: Brundle, C. Richard; Evans, Charles A. Jr.; Wilson, Shaun; Elsevier

For detail syllabus of all subjects of Electronics & Telecommunication Engineering (ET) 4th Sem 2017 onwards, visit ET 4th Sem Subjects of 2017 Onwards.