EC03: Electronic Devices and Circuits Syllabus for EL 3rd Sem 2017 DBATU

Electronic Devices and Circuits detailed syllabus scheme for B.Tech Electronics Engineering (EL), 2017 onwards has been taken from the DBATU official website and presented for the Bachelor of Technology students. For Subject Code, Course Title, Lecutres, Tutorials, Practice, Credits, and other information, do visit full semester subjects post given below.

For all other DBATU Syllabus for Electronics Engineering 3rd Sem 2017, do visit EL 3rd Sem 2017 Onwards Scheme. The detailed syllabus scheme for electronic devices and circuits is as follows.

Electronic Devices and Circuits Syllabus for Electronics Engineering (EL) 2nd Year 3rd Sem 2017 DBATU

Pre-requisite:

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Course Objectives:

• To introduce semiconductor devices FET and MOSFET, their characteristics, operations, circuits and applications.
• To introduce concepts of both positive and negative feedback in electronic circuits.
• To analyze and interpret FET and MOSFET circuits for small signal at low and high frequencies.
• To simulate electronics circuits using computer simulation software and verify desired results.
• To study the different types of voltage regulators.

Course Outcomes:

On completion of the course, student will be able to:

1. Comply and verify parameters after exciting devices by any stated method.
2. Implement circuit and test the performance.
3. Analyze small signal model of FET and MOSFET.
4. Explain behavior of FET at low frequency.
5. Design an adjustable voltage regulator circuits.

Unit 1

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Unit 2

MOSFETand its DC Analysis
Basics of MOS Transistor operation, Construction of n-channel E-MOSFET, E-MOSFET characteristics and parameters, non-ideal voltage current characteristics viz. Finite output resistance, body effect, sub-threshold conduction, breakdown effects and temperature effects. Common source circuit, Load Line and Modes of operation, common MOSFET configurations: DC Analysis, constant current source biasing.

Unit 3

MOSFET AC Circuit Analysis
The MOSFET CS small signal amplifier, Small signal parameters, small signal equivalent circuit, Modeling, Body effect, Analysis of CS amplifier, Introduction to Bi CMOS technology, The MOSFET internal capacitances and high frequency model, Introduction to MOSFET as basic element in VLSI, V-I characteristic equation in terms of W/L ratio, MOSFET scaling and small geometry effects, MOSFET capacitances.

Unit 4

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Unit 5

Feedback amplifiers and Oscillators
Four types of amplifiers, Feedback topologies, Effect of feedback on terminal characteristics of amplifiers. Examples of voltage series and Current series FET feedback amplifiers and their analysis. Barkhausen criterion, stability with feedback. General form of LC oscillator. FET RC Phase Shift oscillator, Wein bridge oscillator, Hartley and Colpitts oscillators.

Unit 6

Voltage Regulator
Block diagram of an adjustable three terminal positive and negative regulators (317,337) Typical connection diagram, current boosting. Low drop out voltage regulators. Introduction to Switch Mode Power supply (SMPS), Block diagram of SMPS, Types of SMPS. Comparison of Linear Power supply and SMPS.

Reference/Text Book:

1. Millman Halkias, Integrated Electronics-Analog and Digital Circuits and Systems, Tata McGraw Hill, 2000.
2. Donald Neaman, Electronic Circuit Analysis and Design, 3rd Edition, Tata McGraw Hill.
3. David A. Bell, ElectronicDevicesandCircuits,5thEdition, Oxford press
4. R. L. Boylstad, L. Nashlesky, Electronic Devices and circuits Theory, 9thEdition, Prentice Hall of India, 2006.
5. Anil K. Maini and Varsha Agarwal Electronic Devices and Circuits, Wiley India
6. Phillip E. Allen, Douglas R. Holberg, CMOS Analog Circuit Design, Second Edition, Oxford.
7. K. R. Botkar, Integrated Circuits, 5th Edition, Khanna Publication.

For detail syllabus of all other subjects of Electronics Engineering (EL) 3rd Sem 2017 regulation, visit EL 3rd Sem Subjects syllabus for 2017 regulation.