Device Modeling Detailed Syllabus for VLSI\/ VLSI Design\/VLSI System Design M.Tech first year first sem is covered here. This gives the details about credits, number of hours and other details along with reference books for the course.<\/p>\n
The detailed syllabus for Device Modeling M.Tech 2017-2018 (R17) first year first sem is as follows.<\/p>\n
M.Tech. I Year I Sem.<\/p>\n
UNIT – I : MOS Capacitor:<\/strong> Energy band diagram of Metal-Oxide-Semiconductor contacts, Mode of Operations: Accumulation, Depletion, Mid gap, and Inversion, 1D Electrostatics of MOS, Depletion Approximation, Accurate Solution of Poisson\u2019s Equation.<\/p>\n UNIT – II : MOS Capacitor Characteristics and Non idealities:<\/strong> CV characteristics of MOS, LFCV and HFCV, Nonidealities in MOS, oxide fixed charges, interfacial charges.<\/p>\n UNIT – III : The MOS transistor:<\/strong> Small signal modeling for low frequency and High frequency, Pao-Sah and Brews models; Short channel effects in MOS transistors.<\/p>\n UNIT – IV : The bipolar transistor:<\/strong> Eber\u2019s-Moll model; charge control model; small-signal models for low and high frequency and switching characteristics.<\/p>\n UNIT – V : FinFETs:<\/strong> I-V characteristics, device capacitances, parasitic effects of extension regions, performance of simple combinational gates and amplifiers, novel circuits using FinFETs and GAA devices.<\/p>\n TEXT BOOKS:<\/strong><\/p>\n\n