Microwave Solid State Devices Detailed Syllabus for Microwave and Radar Engineering M.Tech first year second sem is covered here. This gives the details about credits, number of hours and other details along with reference books for the course.
The detailed syllabus for Microwave Solid State Devices M.Tech 2017-2018 (R17) first year second sem is as follows.
M.Tech. I Year II Sem.
UNIT – I : Varactor Diode: Equivalent circuit, static and dynamic figures of merit Manley Rowe power relation, parametric amplifiers, up converter, Degeneration amplifiers, Varactor multipliers, Charge storage capacitance.
UNIT – II : Tunnel Diode: Equivalent circuit, Tunnel diode stability, Tunnel diode amplifiers, Gunn devices: Volt amp. Characteristics, Small signal, Nonlinear, large signal theory, Modes of operation of Gunn diode, Gunn amplifiers-Gunn oscillators, Avalanche transit time MW diodes. Small signal theory, Large signal operation, Noise.
UNIT – III : PIN Diodes: Description, the I-layer, Equivalent circuit behavior under reverse bias and forward bias, Diode impedance, Materials, Applications.
UNIT – IV : Schottky Barrier Diode: Physics of Schottky barriers, Design of and performance of Schottky barrier diode applications, IMPATT & TRAPATT diodes: Principles and applications as amplifiers and oscillators.
UNIT – V : Microwave Transistor: Wafer design. Equivalent circuit, Design compromises, Package design.
TEXT BOOKS:
- Watson, “Microwave Semiconductor Devices and their applications”, McGraw Hill, 1969.
- Sze. S.M, and Kwok K. Ng, “Physics of Semiconductor Devices”, John Wiley, 3rd Edition 2007.
REFERENCE:
- Shurmer, H.V, “Microwave Semiconductors”, Wien Oldenbourg, 1971.
For all other M.Tech 1st Year 2nd Sem syllabus go to JNTUH M.Tech Microwave and Radar Engineering 1st Year 2nd Sem Course Structure for (R17) Batch.
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