VLSI Design Detailed Syllabus for B.Tech third year second sem is covered here. This gives the details about credits, number of hours and other details along with reference books for the course.
The detailed syllabus for VLSI Design B.Tech 2016-2017 (R16) third year second sem is as follows.
B.Tech. III Year II Sem. L/T/P/C
Course Code:BM613PE 3/0/0/3
Course Objectives: The objectives of the course are to:
- Give exposure to different steps involved in the fabrication of ICs using MOS transistor, CMOS/BICMOS transistors, and passive components.
- Explain electrical properties of MOS and BiCMOS devices to analyze the behavior of inverters designed with various loads.
- Give exposure to the design rules to be followed to draw the layout of any logic circuit.
- Provide concept to design different types of logic gates using CMOS inverter and analyze their transfer characteristics.
- Provide design concepts to design building blocks of data path of any system using gates.
- Understand basic programmable logic devices and testing of CMOS circuits.
Course Outcomes: Upon successfully completing the course, the student should be able to:
- Acquire qualitative knowledge about the fabrication process of integrated circuit using MOS transistors.
- Choose an appropriate inverter depending on specifications required for a circuit
- Draw the layout of any logic circuit which helps to understand and estimate parasitic of any logic circuit
- Design different types of logic gates using CMOS inverter and analyze their transfer characteristics
- Provide design concepts required to design building blocks of data path using gates.
- Design simple memories using MOS transistors and can understand design of large memories.
- Design simple logic circuit using PLA, PAL, FPGA and CPLD.
- Understand different types of faults that can occur in a system and learn the concept of testing and adding extra hardware to improve testability of system
UNIT – I: Introduction: Introduction to IC Technology – MOS, PMOS, NMOS, CMOS & BiCMOS
Basic Electrical Properties: Basic Electrical Properties of MOS and BiCMOS Circuits: IdsVds relationships, MOS transistor threshold Voltage, gm, gds, Figure of merit ωo; Pass transistor, NMOS Inverter, Various pull ups, CMOS Inverter analysis and design, Bi-CMOS Inverters.
UNIT – II: VLSI Circuit Design Processes: VLSI Design Flow, MOS Layers, Stick Diagrams, Design
Rules and Layout, 2 µm CMOS Design rules for wires, Contacts and Transistors Layout Diagrams for NMOS and CMOS Inverters and Gates, Scaling of MOS circuits.
UNIT – III: Gate Level Design: Logic Gates and Other complex gates, Switch logic, Alternate gate
circuits, Time delays, Driving large capacitive loads, Wiring capacitance, Fan – in, Fan – out, Choice of layers.
TEXT BOOKS:
- Essentials of VLSI circuits and systems – Kamran Eshraghian, Eshraghian Dougles and A. Pucknell, PHI, 2005 Edition
- CMOS VLSI Design – A Circuits and Systems Perspective, Neil H. E Weste, David Harris, Ayan Banerjee, 3rd Ed, Pearson, 2009.
REFERENCE BOOKS:
- CMOS logic circuit Design – John .P. Uyemura, Springer, 2007.
- Modern VLSI Design – Wayne Wolf, Pearson Education, 3rd Edition, 1997.
For all other B.Tech 3rd Year 2nd Sem syllabus go to JNTUH B.Tech Biomedical Engineering 3rd Year 2nd Sem Course Structure for (R16) Batch.
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